Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
نویسندگان
چکیده
منابع مشابه
Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells
For intermediate-band solar cells, the broad absorption spectrum of quantum dots (QDs) offers a favorable conversion efficiency, and photocurrent generation via efficient two-step two-photon-absorption (TS-TPA) in QDs is essential for realizing high-performance solar cells. In the last decade, many works were dedicated to improve the TS-TPA efficiency by modifying the QD itself, however, the ob...
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In this paper we present an optical characterization for quantum dot intermediate band solar cells (QDIBSCs). The cells were developed by growing a stack of ten InAs/GaAs QDs layers between p and n doped GaAs conventional emitters. Electroluminescence, EL, photoreflectance, PR, and transmission electron microscopy, TEM, were applied to the samples in order to test and characterize them opticall...
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We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000 nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals t...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2010
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3468520